Scaling Behavior of the Magnetization of Insulating Si:P

Using a Faraday balance, we have measured the susceptibility to down to 1.25K and the magnetization up to 50kG at several temperatures for insulating phosphous-doped silicon ranging from low impurity concentrations to near the metal-nonmetal transition. We find a low-field susceptibility that is consistent with X~T(-a), as in previous measurements.