Schottky barrier height enhancement on M-P(+)-N structures including free-carriers.

The formation of metal-p(+)-n structures represents one of the methods utilized for enhancing the height of Schottky barriers on semiconductors whose normal barrier height is inadequate in device applications to provide current isolation in reverse bias. In(.53)Ga(.47)As is a particular case in point with an n-type barrier height of only ~ 0.2 eV. In the present work numerical solutions of Poisson's equation including electron and hole free-carrier concentrations have been carried out under zero bias conditions on GaAs, InP, and In(53)Ga(47)As as a function of the p(+) layer width and p(+)/n doping ratio.