Schottky barrier heights and the continuum of gap states.
01 January 1984
Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is simple related to the bulk semiconductor bandstructure. In this way "canonical" Schottky barrier heights are calculated for several semiconductors. These are in excellent agreement with experiment for interfaces with a variety of metals.