Schottky barrier heights of single crystal silicides on Si (111).
01 January 1984
Capacitance and current characteristics at single crystal silicide- silicon interfaces are studied. Schottky barrier heights are determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on Si(111). These results demonstrate the influence of interface structure on Schottky barrier height. This dependence suggests a reassessment of many previous interpretations or models of Schottky barriers.