Secondary Ion Relative Sensitivity Factors of 49 Elements in Si for O sup + sub 2 Bombardment with Negative Ion Detection and Cs sup + Bombardment with Positive Ion Detection

Most SIMS analyses of semiconductor materials are made with P sup + sub 2 and positive ion detection (O sup + sub 2, +) and Cs sup + and negative ion detection (Cs sup +,-). This study examines the secondary ion yields obtained by detection of the opposite secondary ion polarity for each primary beam. The O sup + sub 2, - results show no significant benefit as far as detection limit when compared to O sup + sub 2, + or Cs sup +,-. However, yield data for the negative ion molecular species may increase the understanding of ion formation.