Selective metal-organic chemical vapor deposition of InP on masked substrates.

The selective growth of InP on Si0(2) masked substrates is demonstrated using metal-organic chemical vapor deposition. InP is not heterogeneously nucleated on Si0(2) masks but grows epitaxially on adjoining semiconducting material. This lack of mask nucleation results in an accelerated growth rate in the vicinity of the mask edge. In spite of the lack of nucleation on the Si0(2), a tendency for the epitaxial InP to overgrow the mask from the edges was observed for many of the samples. Both the accelerated edge growth rate and the oxide overgrowth could be suppressed on mesa- or channel-etched substrates when the etch undercut the mask. The mask overhang that resulted from the etch undercutting acted to prevent growth that occurred on the etched sidewalls from proceeding to the top of the mask.