Self-aligned InP pn junction diodes fabricated with He-3(+) bombardment.

Pn junction diodes have been defined in epitaxially grown InP layers with 3He+ bombardment. The 3He+ ions have been used to convert the exposed portions of the p layers into semi-insulating regions (rho=10(9)omega-cm). IV characteristics with good rectification and reverse current of ~200nA at -2V have been obtained. The use of 3He+ offers significant advantages over protons in the fabrication of InP based devices and may be useful for detector applications such as the formation of guard rings in long wavelength avalanche photodiodes.