Self-heating of submicrometer InP-InGaAs DHBTs

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 x 4 mum(2). From the temperature dependence of V(be), we measured a thermal resistance of R(th) = 3.3 degrees C/mW for DHBTs with ion-implanted n(+) -InP subcollector at room temperature, compared to a high R(th) = 7.5degrees C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.