Semi-Insulating Properties of Fe-Doped InP Grown by Hydride Vapor Phase Epitaxy

Epitaxial layers grown by hydride vapor phase epitaxy using N sub 2 as a carrier gas were studied. Charge transport measurements at temperatures as high as 416K and as low as 38K were made on layers grown on (100), (311)B, (511)B, and (110) oriented substrates. Resistivities in the range 4x10 sup 6 -2x10 sup (10) ohm-cm were obtained in all cases except for growth on (311)B surfaces. In that case resistivities were in the range 1x10 sup 3 -5x10 sup 7 ohm-cm. Detailed fitting to I-V data was done using a two trap model, and a good fit was obtained if traps lying at 0.68 eV and 0.30 eV below the conduction band were included.