Semiconductor Analysis Using Organic-on-Inorganic Contact Barriers. II. Application to InP-Based Compound Semiconductors
01 January 1986
Organic-on-inorganic (OI) contact barrier devices have been applied to the study of InP and In sub (0.53) Ga sub (0.47) surfaces. The latter material is the narrowest bandgap (0.75 eV) composition of InGaAs(P) compounds that can be grown epitaxially on InP substrates. The characteristics of these devices differ from OI diodes fabricated using Si, GaAs or Ge substrates in that the contact barriers for InP-based devices are relatively small (= 0.55 eV), and the diode characteristics are governed by a high density of states at the organic/inorganic interface.