Semiconductor Quantum Structures by Employment of the Delta-Doping Technique: Physics and Device Applications
05 October 1988
It is desirable to generate spatially strongly confined dopant distributions in a semiconductor. Such dopant distributions can be mathematically described by the Dirac-delta function. It is shown under which crystal growth condition such confined dopant distribution can be achieved. The role of diffusion and segregation of impurities is estimated. Novel device concepts, such as non-alloyed ohmic contacts, have been realized by the doping technique. Conventional device concepts, such as field-effect transistors, are improved using the delta-doping technique.