Semiconductor Strained Layer Heteroepitaxy

Modern materials technology is largely based on the modification and control of the surface and interface region of solids. A prime example is the area of layered semiconductor structures produced by molecular beam epitaxy (MBE). I will review the fundamental materials problems which need to be solved for successful growth of these structures and discuss some of the analysis techniques which have to be employed to achieve this goal. In particular I will concentrate on high energy ion scattering, a tool uniquely suited for the ex situ analysis of thin films and interfaces, and reflection high energy electron diffraction, a method capable of extensive in situ analysis far beyond its traditional utilization.