Sensing Behavior of Pd-SnO sub (x) MIS Structure used for Oxygen Detection
01 January 1987
A new type of oxygen sensor with a Pd-SnO sub (x)-Si sub 3N sub 4-SiO sub 2-Si-Al MIS structure has been developed, and is capable of detecting partial pressures of less than 0.1 Torr of O sub 2 at 300K. The detection principle of this device is based on the changes in ionic charge of the SNO sub (x) film during oxygen adsorption and consequent changes in the flat-band voltage. Device fabrication processing, SnO sub (x) film composition, structure and electrical characterization are described briefly. The experimental results for the steady-state and transient behavior of the device are presented. The concentration of oxygen ions adsorbed in the MIS structure at a given temperature and oxygen pressure are measured by the triangular voltage sweep method, which confirmed a postulated detection mechanism.