Sequential Surface Chemical Reaction Limited Growth of High Quality Al sub 2 O sub 3 Dielectrics.

Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al sub 2 O sub 3 on Si(100) surfaces. High quality dielectrics have been deposited at temperatures as low as 100C. Resistivities of 10 sup 17 OMEGA- cm, breakdown strengths of 8 x 10 sup 6 V/cm and interface state densities of 10 sup 11 states/eV-cm sup 2 have already been achieved and suggest possible applications as a gate-insulator or a dielectric passivation layer.