Series Resistance Limits for 0.05microns MOSFETs

Technology scaling demands shallower junctions for MOSFETs, making high conductivity access to the intrinsic device harder to achieve. Considerable effort has been devoted to improving process technology in order to reduce the sheet resistivity of shallow implanted layers. However, a calculation of the components of resistance as a function of technology node suggests that sheet resistance is unlikely to be a limiting factor in scaled MOSFETs. Contact and link-up resistance neighboring the channel will play an increasingly important part in driving junction technology.