Silicon oxide enhanced Schottky gate InGaAs FETs with a self- aligned recessed gate structure.

We present the fabrication characterization of an InGaAs enhanced Schottky gate FET with a self-aligned recessed gate structure. A thin layer of e-beam evaporated silicon oxide was used to reduce the gate leakage current. For a n-channel doping of 8 x 10(16)cm(-3) and a gate length of 1.5 microns, these devices showed good pinch-off characteristics with transconductances of 150 mS/mm. The effective velocity of electrons at current saturation is deduced to be 2.4 x 10(7) cm/sec, at the drain end of the gate. At 3 GHz these devices have a maximum availability gain of 10 dB, and decrease to 6 dB at 6 GHz.