Spatial Localization of Impurities in Delta-Doped GaAs.
01 January 1988
Capacitance-voltage profiles on delta-doped GaAs grown by molecular- beam epitaxy, reveal extremely narrow width of 40 angstroms at room temperature. Subband structure and capacitance-voltage (CV) profiles of delta-doped GaAs are calculated self-consistently. Experimental CV-profiles agree with self-consistent data, only if we assume that Si-impurities are localized within one single monolayer of the host GaAs zincblende lattice.