Specular scattering in electrical transport in the thin film system CoSi2/Si.
01 January 1985
We have investigated electrical transport in thin films of CoSi2 at low temperatures as a function of film thickness and observe in conductivity a size effect much smaller than seen heretofore indicative of a high degree of specularity in the boundary scattering. This in large part owes to the unique characteristics of these films, i.e., they are single crystal and continuous down to ~60angstrom thickness with long bulk scattering lengths (~1000angstroms) in transport at liquid He temperatures and have nearly atomically perfect interfaces.