Stresses in the InP/SiO2/Ti/Pt multilayer system.
01 January 1985
The contact metallization of 1000angstroms Ti followed by 1500angstroms Pt deposited by R.F. diode sputtering onto InP is of very low stress, as has previously been reported for this metallization on GaAs. This is due to the effect of compressive stress in the Ti film being compensated by tensile stress in the Pt film.