Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures

We have examined a series of samples consisting of 200A In sub x As sub 1-x As layered in a hetero-junction bipolar transistor (HBT) structure (In sub x Ga sub 1-x As on GaAs, followed by GaAs, A1GaAs and a GaAs cap) in order to correlate structural, electronic, and device properties with In concentration. In this study, sub x was varied from 0 to 0.5, which spans the range from pseudomorphic growth to layers well above the critical thickness.