Structural characterization of GaInAs(P)/Inp quantum well structures grown by gas-source MBE.

We have carried out an X-ray study of twenty-well quarternary InGaAsP/InP structures grown on [100] InP by gas source molecular beam epitaxy. The multilayers were found to grow laterally coherent and very closely lattice matched in the [100] growth direction. The presence of well-defined higher order harmonics in the X-ray diffraction confirms the high quaIity of InGaAs (P)/InP superlattices grown by the gas source MBE technique.