Structural Perfection of InGaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy
30 November 1987
High-resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas source molecular beam epitaxy. In this new, successfully developed growth technique[1], the gas sources in the form of thermal crackers of AsH sub 3 and PH sub 3 provide precise growth of superlattices with sharp interfaces.