Structural Studies of Epitaxial Metal Semiconductor Interfaces Using Transmission Electron Scattering

Epitaxial semiconductor/metal interfaces are usually studied in the transmission electron microscope (TEM) in two specimen geometries: planview and cross-section. In planview samples the electron beam impinges perpendicular to the plane of the interface, which allows for quantitative diffraction and conventional diffraction/imaging. In cross-section samples the electron beam is at grazing incidence and high resolution TEM images can be recorded. The advantages and limitations of each technique will be discussed using examples drawn from our continuing study of CoSi sub 2 /Si(001) 2x1/1x2 sub (1) and from work on Al/GaAs(001).