Structure of hydrogenated Si-Ge and Si-SiN sub x amorphous semiconductors heterojunctions.
01 January 1987
We determined by Extended X-ray Absorption Fine Structure the interface structure in hydrogenated amorphous Si-Ge and Si- SiN sub x multilayers. The Si interface atoms are bound on the average to two Si and two Ge atoms. Our results indicate that the interfaces are atomically abrupt in both systems.