Structure of Interfaces: The Case of the Elemental-Compound Semiconductor Heterostructure
21 January 1986
A new approach to structural studies of heterostructure interfaces will be presented using the GaAs-Ge system as a model system. This type of heterostructure should be favored for understanding the formation of defects at interfaces between elemental and compuund semiconductors because of the excellent lattice match between Ge and GaAs.