Studies of CoSi sub 2 Nano-Structures Produced by High Dose Ion Implantation in Si

Recently it has been shown that buried layers of single crystal, orientated CoSi sub 2 can be produced in silicon by implanting high doses of Co followed by a high temperature anneal. This process is known as mesotaxy. The original implant produces a skewed Gaussian distribution of ions. However, on annealing it is found that the distribution sharpens dramatically to give layers which have flat and abrupt interfaces and are of very good structural and electrical quality.