Study of As: Si(111) by Neutral Helium Scattering
06 June 1988
The As-terminated Si(111) surface has attracted considerable attention recently. Under proper deposition conditions, the As atoms replace the outermost Si atoms in the surface double layer, producing a stable (1x1) surface which is of interest not only technologically, by virtue of its extreme chemical passivity and as a probable first step in epitaxial growth of GaAs on Si(111), but also as a model system for study of strong chemisorption on semiconductor surfaces.