Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma Assisted MBE on 6H-SiC

High Electron Mobility Transistors (HEMTs) were fabricated from AlGaN/GaN layers grown by plasma-assisted Molecular Beam Epitaxy on semi-insulating 6H-SiC substrates. This is the first report of high-power submicron AlGaN/GaN HEMTs grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates, and the highest drain current density in any AlGaN/GaN HEMT structure delivering significant microwave power reported thus far.