Submicron InP D-HBT Single-Stage Distributed Amplifier with 17 dB Gain and Over 110 GHz Bandwidth
11 June 2006
High-performance and compact distributed amplifiers were realized in a 0.5 um emitter double-heterojunction InGaAs/InP HBT (D- HBT) technology with current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with a flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than -10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single- stage amplifiers to our knowledge.
