Submicron self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance.

A new submicron InGaAs depletion mode MISFIT with self-aligned recessed gate structure is presented. The techniques used to implement this FET structure are angle evaporation for submicron pattern definition and sputter etching/wet chemical etching for channel recess. Highest transconductance observed was 300mS/mm, with 200 mS/mm as a more typical value. The very high transconductance is attributed partly to the low source series resistance achieved in this structure, typically 0.5 omega-mm or less. From the I-V characteristic of these FETs, a saturation velocity equal to 2.4 x 10(7)cm/sec at the drain end was deduced.