sup 13 C Isotopic Labeling Studies of Growth Mechanisms in the Metalorganic Vapor Phase Epitaxy of GaAs

Although metalorganic vapor phase epitaxy (MOVPE) is an important technique for the deposition of semiconductor thin films with a wide range of composition and doping profiles, little information exists on the details of the underlying chemistry controlling the process. We have used sup 13 C isotopic labeling experiments to obtain direct evidence on how the alkyl reactants used in MOVPE affect the growth and impurity incorporation reactions.