Surface Diffusion and Inslanding in Semiconductor Heterostructure: Ge on Si.

Inslanding and surface diffusion for Ge on Si(111)7x7 and Si (100)2x1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities. Non-Fickian surface diffusion was observed on Si(100)2x1; however, surface diffusion was demonstrated to be extremely sensitive to contamination with carbon on the order of ~0.05 ML, as well as to e-beam irradiation. Stranski-Krastanov growth with complex island size distributions was observed on Si(111)7x7.