Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation.

Techniques for the preparation of specimens for Transmission Electron Microscopy analysis are described. Cross-sectional specimens of insulator/semiconductor heterostructure have been successfully prepared. The problem of differential thinning rates and interface amorphization during argon ion-milling have been overcome using low argon ion accelerating voltages and shallow angles of incidence. Techniques for preparation of plan view specimens include the preparation of silicon substrates for in-situ crystal growth in an ultrahigh vacuum Transmission Electron Microscope.