Temperature dependent stress measurements of silicon oxide films prepared by a variety of CVD methods.

We report the stress as function of temperature of films of undoped and doped silicon oxide. These materials were prepared by chemical vapor deposition (CVD) from a variety of chemical reactions, under different physical conditions, and include DADBS (450, 500, and 550C), doped and undoped TEOS (500 and 685C), doped and undoped silane + oxygen (400, 410, and 440C), wet oxygen (950C), and plasma enhanced (PEVCD) silane + nitrous oxide (250C).