Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3 mu m

The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p-type doped ten InAs/GaAs quantum-dot layer lasers is reported in the 20-80 degrees C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 degrees C. (C) 2008 American Institute of Physics.