Tetramethylpentacene: Remarkable absence of steric effect on field effect mobility

A new pentacene derivative, 2,3,9,10-tetramethyl-pentacene (Me4PENT), has been synthesized, characterized, and tested in a field-effect transistor (FET) device (see Figure). A bottom-contact-mode FET device fabricated with Me4PENT was shown to exhibit a high charge-transport mobility of 0.31 cm(2) V-1 s(-1) when fabricated at a deposition substrate temperature of 85 degreesC.