The 3942 cm(-1) optical band in irradiated silicon.

Uniaxial stress perturbations are reported on the 3942 cm(- 1) (488 meV) zero phonon line common to irradiated Czochralski silicon. We show that the line occurs at a monoclinic l center, with the electric dipole perpendicular to the principal axis of the center. Carbon and oxygen isotope doping experiments show that the optical center contains at least one carbon atom and at least one oxygen atom. Irradiation of tin doped Czochralski Si reduces the rate of production of 3942 cm(-1) absorption, suggesting that vacancies may also be required in the formation of the centers. We find no evidence for other electronic states of the 3942 cm(-1) center with energies similar to the states taking part in the 3942 cm(-1) transition.