The AlAs/GaAs Tunnel Emitter Bipolar Transistor.
01 January 1989
We report the first microwave AlAs/GaAs tunnel emitter bipolar transistor (TEBT) utilizing nonequilibrium electron transport in the base. A dc current gain of 82 and unity current gain cut-off frequency 30 GHz is measured at room temperature. Enhanced device scaling is made possible with the extremely high velocity in the thin base region.