The Application of DLTS and SRP Techniques on Gold Diffused P+/n Silicon Diodes
23 October 1991
DLTS and spreading resistance probe(SRP) techniques have been used to characterize commercial sheet diffused diodes during manufacture for the purpose of determining gold diffusion parameters and obtain optimum device performance. p+/n junctions were formed by n-type epitaxy 55 microns diameter p+(100) substrates and isolated by moats.