The application of process and device simulation tools to VLSI development.

This paper describes the application of process and device simulation tools to bipolar and MOS technologies at AT&T Bell Laboratories. This work culminated in the development of an integrated modeling system in which a process description is used to generate compact circuit-level model parameters in a highly automated manner. This memorandum will be included as a chapter in "Process and Device Simulation", edited by W. L. Engl, Volume 1 in the series "Advances in CAD for VLSI", North-Holland.