The application of silicon molecular beam epitaxy to VLSI.

Silicon molecular beam epitaxy is reviewed emphasizing opportunities for application in VLSI. These include: 1) exploitation of MBE control and uniformity in device scaling and/or process refinement; 2) use of mathematically arbitrary dopant profiles in optimized device structures; 3) MBE heteroepitaxy of crystalline insulators, metals and semiconductors; 4) combination of doping and heteroepitaxial capabilities in heterojunction devices. In each of these areas examples are provided from the recent literature.