The dependence of modified chemical vapor deposition process (MCVD) equilibria on SiCl(4), GeCl(4) and O(2) concentrations as determined by the element potential method.
01 January 1984
The high temperature equilibrium concentration of the gaseous species and of the deposited glass formed by the oxidation of the chlorides of silicon and germanium has been measured and compared with thermodynamic calculations. The recently redeveloped element potential method is used to minimize the Gibbs energy of the system and obtain the temperature and compositional dependences. The agreement of calculated and experimental results obtained in this work suggests a broad spectrum of uses of the method in understanding and calculating chemical reactions.