The dependence of the cathodoluminescence spectra of (Al,Ga)As epitaxial layers on alloy composition.
01 January 1985
Cathodoluminescence spectroscopy has been perfected as an accurate technique for measuring the alloy composition of III-V semiconductor epitaxial layers in complex optoelectronic devices. (Al,Ga)As alloy compositions can be measured to within +-1.2 percent AlAs. Since the cathodoluminescence apparatus has been incorporated in a conventional scanning electron microscope, the cross section of a complex device structure can be imaged in the high resolution secondary electron mode and then individual submicron layers can be excited and their cathodoluminescence spectra analyzed.