The dynamic gradient freeze growth of (Ti+Zn) doped semi-insulating InP.
01 January 1990
High quality single crystals of semi-insulating InP were grown by the Dynamic Gradient Freeze technique. The material is co- doped with the shallow acceptor zinc and the deep donor titanium. Resistivities in the 10 sup 5 - 10 sup 6 ohm cm range were measured with corresponding mobilities of 2500cm sup 2/V-sec. Variable temperature Hall measurements resulted in an activation energy of 0.61 +- .03 eV below the conduction band. The dislocation density is less than 500/cm sup 2 and is the lowest ever reported for comparably sized semi-insulating InP bulk crystals.