The Effect of Boron Implantation on the Interdiffusion of Si/Ge Amorphous Artificial Multilayers

The interdiffusivity in artificial multilayered films can be measured by monitoring, as a function of annealing time, the intensity of the X-ray peaks resulting from the composition modulation. This technique is the most sensitive available, and allows measurements over a considerable temperature range below the crystallization temperature of amorphous Ge.