The Effect of Chemical Reactivity and Charge Transfer on Gallium Arsenide (110) Schottky Barrier Formation
06 April 1988
Transition and near noble metals have been deposited in sequential steps on atomically clean cleaved Gallium Arsenide (GaAs) surfaces under ultra-high vacuum conditions. Soft X-ray and ultra-violet photoemission spectroscopies were used to elucidate the room temperature (RT) chemistry and Fermi level pinning behaviors of these systems.