The effect of inversion symmetry on the bandstructure of semiconductor heterostructures.
01 January 1984
Two classes of artificial semiconductor heterostructures, differing only in the inversion symmetry of their internal quantum wells, are studied via magneto-transport. The samples consist of GaAs/(AlGa)As layered structures containing two-dimensional hole systems. The results reveal a lifting of the spin-degeneracy of the lowest hole subband in the samples with inversion asymmetric quantum wells. In those structures with symmetric wells the subband remains doubly degenerate.