The effect of rapid thermal annealing on heteroepitaxial structures.
01 January 1987
We present evidence on the types of structural changes caused by the rapid thermal annealing of two types of heteroepitaxial layers: CaF sub 2 /CoSi sub 2 /Si(111) and Si(100) on Al sub 2 O sub 3 (1102). We find that grains in a film can be merged into a single crystal and that the microtwin density can be dramatically lowered. We also find a number of changes in the structure of the heteroepitaxial interfaces.