The Effect of Rapid Thermal Annealing on the Dislocation Structure of SOS
28 November 1988
Recent published work has shown that the crystalline quality of as deposited films of silicon on sapphire (SOS) can be dramatically improved by rapid thermal annealing (RTA). Whilst it has been established that much of this improvement is due to a reduction in the number and extent of microtwins in the epilayer, the mechanism by which this occurs is not well established.