The Effect of Strain on the Valence Band Structure of InAs (100)

The structural effects of applying stress to a pseudomorphic overlayer has been extensively studied over the past two decades. By comparison, little progress has been made in characterizing the effects of stress on the electronic structures of these layers. In this work, thin pseudomorphic layers of InAs were grown on selected III-V (100) substrates to ascertain the effect of the variation of the in-plane bi-axial stress on its valence band (VB) density of states.